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 2N1595 thru 2N1599
SILICON THYRISTOR
Industrial-type, low-current silicon controlled rectifiers in a three-lead package ideal for printed-circuit applications. Current handling capability of 1.6 amperes at junction temperetures to 125C
MAXIMUM RATINGS (*)
TJ=125C unless otherwise noted
Symbol
VRSM(REP) IT(RMS) ITSM PGM PG(AV) IGM VGFM VGRM TJ TSTG
Ratings
Peak reverse blocking voltage * Forward Current RMS (all conduction angles) Peak Surge Current (One Cycle, 60Hz, TJ=-65 to +125C) Peak Gate Power - Forward Average Gate Power - Forward Peak Gate Current - Forward Peak Gate Voltage - Forward Peak Gate Voltage - Reverse Operating Range Junction Temperature
2N1595
2N1596
2N1597
2N1598
2N1599
50
100
200
1.6 15 0.1 0.01 0.1
300
400
V
Amp Amp
W W
Amp
10 10 -65 to +125
V V C
Storage Temperature Range
-65 to +150
ELECTRICAL CHARACTERISTICS
TJ=25C unless otherwise noted, RGK=1000
Symbol
VDRM IRRM
Ratings
Peak Forward Blocking Min : Voltage * Peak Reverse Blocking Current (Rated VDRM, TJ =125C)
2N1595
2N1596 2N1597 2N1598
2N1599
50
100
200 Max : 1.0
300
400
V mA
COMSET SEMICONDUCTORS
1/2
2N1595 thru 2N1599
Symbol
IDRM
IGT
Ratings
Peak Forward Blocking Current (Rated VDRM with gate open , TJ =125C) Gate Trigger Current (2) Anode Voltage=7.0 Vdc, RL=12 Gate Trigger Voltage Anode Voltage=7.0 Vdc, RL=12 VDRM = Rated, RL=100, TJ=125C
2N1595
2N1596
2N1597
2N1598
2N1599
Max :1.0 Typ : 2.0 Max : 10 Typ : 0.7 Max : 3.0 Min : 0.2 Typ : 5.0 Typ : 1.1 Max : 2.0 Typ : 0.8
mA mA
VGT
V mA V s s
IH VTM tgt
Holding Current Anode Voltage=7.0 Vdc, gate open Forward On Voltage IT=1 Adc Turn-On Time (td+tr) IGT=10 mA, IT=1 A Turn-Off Time IT=1 A, IR =1 A, dv/dt=20 V/s, TJ=125C VDRM = Rated Voltage
tq
Typ : 10
* VDRM or VRSM can be applied for all types on a continuous dc basis without incurring damage.
MECHANICAL DATA CASE TO-39
DIMENSIONS
A B C D E F G H L Pin 1 : Pin 2 : Pin 3 : mm inches 6,25 0,24 13,59 0,53 9,24 0,36 8,24 0,32 0,78 0,03 1,05 0,041 0,42 0,165 45 5,1 0,2 Cathode Gate Anode
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice.
COMSET SEMICONDUCTORS
2/2


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